2n7002dw document number: ds30120 rev. 16 - 2 1 of 5 www.diodes.com november 2013 ? diodes incorporated 2n7002dw dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 60v 7.5 ? @ v gs = 5v 0.23a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? motor control ? power management functions features ? dual n-channel mosfet ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (notes 3 & 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot363 ? case material: molded plasti c. ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.006 grams (approximate) ordering information (note 5) part number compliance case packaging 2n7002dw -7-f standard sot363 3,000/tape & reel 2n7002dwq -7-f automotive sot363 3,000/tape & reel 2n7002dw -13-f standard sot363 10,000/tape & reel 2n7002dwq -13-f automotive sot363 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. product manufactured with date code uo (week 40, 2007) and newer are built with green molding compound. product manufacture d prior to date code uo are built with non-green molding compound and may contain halogens or sb 2 o 3 fire retardants. 5. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 1998 1999 2000 2001 2002 2003 2004 ? 2011 2012 2013 2014 2015 2016 2017 code j k l m n p r ? y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view top view internal schematic s 1 d 1 d 2 s 2 g 1 g 2 k72 k72 ym ym k72 k72 ym ym k72 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) ym = date code marking for cat (chengdu assembly/ test site) y or y = year (ex: a = 2013) m = month (ex: 9 = september)
2n7002dw document number: ds30120 rev. 16 - 2 2 of 5 www.diodes.com november 2013 ? diodes incorporated 2n7002dw maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous v gss 20 v pulsed v gss 40 v continuous drain current (note 7) v gs = 5v steady state t a = +25 c t a = +70 c t a = +100 c i d 0.23 0.18 0.14 a maximum continuous body diode forward current (note 7) i s 0.53 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 0.8 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 0.31 w t a = +70c 0.2 t a = +100c 0.12 thermal resistance, junction to ambient (note 6) steady state r ja 410 c/w total power dissipation (note 7) t a = +25c p d 0.4 w t a = +70c 0.25 t a = +100c 0.15 thermal resistance, junction to ambient (note 7) steady state r ja 318 c/w thermal resistance, junction to case (note 7) steady state r jc 135 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 60 70 ? v v gs = 0v, i d = 10a zero gate voltage drain current @ t c = +25c @ t c = +125c i dss ? ? 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss ? ? 10 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 1.0 ? 2.0 v v ds = v gs , i d = 250a static drain-source on-resistance @ t j = +25c @ t j = +125c r ds (on) ? 3.2 4.4 7.5 13.5 v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d ( on ) 0.5 1.0 ? a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ? ? ms v ds =10v, i d = 0.2a diode forward voltage v sd ? 0.78 1.5 v v gs = 0v, i s = 115ma dynamic characteristics (note 9) input capacitance c iss ? 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 11 25 pf reverse transfer capacitance c rss ? 2.0 5.0 pf switching characteristics (note 9) turn-on delay time t d ( on ) ? 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 , v gen = 10v, r gen = 25 turn-off delay time t d(off) ? 11.0 20 notes: 6. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7. device mounted on fr-4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. no t subject to product testing.
2n7002dw document number: ds30120 rev. 16 - 2 3 of 5 www.diodes.com november 2013 ? diodes incorporated 2n7002dw 0 0.2 0.4 0.6 0.8 1.0 0 123 45 v , drain-source voltage (v) figure 1 on-region characteristics ds i, d r ai n -s o u r c e c u r r e n t (a) d 0 1 2 3 4 5 00.2 r , n o r malized drain-source on-resistance ds(on) i , drain current (a) figure 2 on-resistance vs. drain current d 6 7 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 -55 -30 -5 20 45 70 95 120 145 r , n o r malized drain-source on-resistance ds(on) t , junction temperature ( c) figure 3 on-resistance vs. junction temperature j v = 5.0v, i gs d = 0.05a 0 v , gate to source voltage (v) figure 4 on-resistance vs. gate-source voltage gs 1 2 3 4 5 6 0 2 4 6 8 1012141618 r, normalized drain-source on-resistance ds(on) v , drain-source voltage (v) figure 5 soa, safe operation area ds i, d r ain c u r r en t (a) d t = 150c t = 25c single pulse j(max) a 0.001 0.01 0.1 1 0.1 1 10 100 r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
2n7002dw document number: ds30120 rev. 16 - 2 4 of 5 www.diodes.com november 2013 ? diodes incorporated 2n7002dw package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 a m j l d b c h k f x z y c1 c2 c2 g
2n7002dw document number: ds30120 rev. 16 - 2 5 of 5 www.diodes.com november 2013 ? diodes incorporated 2n7002dw important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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